Strained-Si Heterostructure Field Effect Devices

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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions ...

Strained-Si Heterostructure Field Effect Devices 2007, Taylor & Francis Group, New York, NY

ISBN-13: 9780750309936

Hardcover

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