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Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications

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This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications 2016, Springer

ISBN-13: 9789402402056

Softcover Reprint of the Origi edition

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Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications 2013, Springer

ISBN-13: 9789400776623

2014 edition

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