Novel Nanoscale Mosfet with TCAD

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Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect. Here work have been carried by doing engineering fabrication technique to reduce its SCE under 40nm channel length of an engineered device and is compared the non engineered ...

Novel Nanoscale Mosfet with TCAD 2012, LAP Lambert Academic Publishing, Saarbrucken

ISBN-13: 9783659197864

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