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Introduction to Magnetic Random-Access Memory

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Introduction to Magnetic Random-Access Memory - Dieny, Bernard, and Goldfarb, Ronald B, and Lee, Kyung-Jin
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Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM ...

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Introduction to Magnetic Random-Access Memory 2016, Wiley-IEEE Press

ISBN-13: 9781119009740

Hardcover