Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices - Gusev, Evgeni (Editor), and North Atlantic Treaty Organization, and NATO Advanced Research Workshop on Fundamental Aspects of...

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices 1998, Springer, Dordrecht, Netherlands

ISBN-13: 9780792350071

1998 edition

Hardcover

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