In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh- speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. ...

Compound and Josephson High-Speed Devices 2013, Springer-Verlag New York Inc., New York, NY

ISBN-13: 9781475797763


Compound and Josephson High-Speed Devices 1993, Springer, New York, NY

ISBN-13: 9780306443848

1993 edition