Compound Semiconductors Strained Layers and Devices

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During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength ...

Compound Semiconductors Strained Layers and Devices 2000, Springer, Boston, MA

ISBN-13: 9780792377696

2000 edition

Hardcover

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