Cmos Gate-stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155

by , ,

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover ...

Currently there are no copies available. However, our inventory changes frequently. Please check back soon or try Book Fetch.