Defects and Diffusion in Semiconductors: No.4: An Annual Retrospective
This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period ... Show synopsis This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defects behaviour in Ge, GeSi, InGaAs, Si and Znse. Altogether, these eight long reviews, nine research papers and 752 selected abstracts provide an insight into trends in semiconductor theory, processing and applications.